Two UWM Condensed Matter Physics groups, led by Dr. Lian Li and Dr. Michael Weinert, recently published a paper on the electron transport characteristics of graphene on semiconductor surfaces. The study was published in the Nov. 21 issue of Nature Communications and reported intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction. Their findings reveal fundamental properties of the Schottky junction – a key component of vertical graphene devices. Knowledge of these properties may assist in the future engineering of a transistor with graphene and the creation of other more complicated nano-devices.