Dr. Narae Kang, Intel Corp.

Design, Fabrication, and Characterization of Nanoelectronic Devices: From Carbon Nanotubes to Graphene, and Beyond

Fabrication of high-performance electronic devices using novel semiconductors is essential for developing future electronics applications such as large-area, flexible and transparent displays, sensors and solar cells. In the first part of my talk, I will discuss the fabrication of nanoelectronic devices and investigation of their transport properties using carbon nanotubes (CNTs) and graphene as electrode materials. I investigated two types of devices using (i) semiconducting CNTs, and (ii) organic semiconductors. The study suggests that, in addition to strong π- π interaction at graphene/pentacene interface, the tunable electronic properties of graphene as electrode have a significant role in the device performance. For a fundamental understanding of the interface, short-channel OFETs with sub-100nm channel length were fabricated using graphene electrode. From the low temperature electronic transport measurements, a lower charge injection barrier was found from the devices with graphene electrode. This investigation suggested that the use of carbon-based materials as electrodes can enhance the performance of future nanoelectronic devices. In the second part of my talk, I will discuss the recent interesting findings from the research in tailoring the properties of layered two-dimensional transition metal dichalcogenides (TMDC) via controlled defect engineering. Due to the large intrinsic bandgap, TMDC materials have emerged as promising candidates for the 2D device engineering.

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