Lian Li: Vita

Department of Physics                                                                  Phone:     414-229-5108
University of Wisconsin                                                                 Fax:          414-229-5589
Milwaukee, WI 53201                                                                    Email:      lianli@uwm.edu
__________________________________________________________________________________________________________

EDUCATION

  • Ph.D., Solid State Physics, Arizona State University (1995), Tempe, AZ
  • M.S., Theoretical Physics, Tongji University (1987), Shanghai, P. R. China
  • B.S., Theoretical Physics, Yunnan University (1983), Kunming, P. R. China

POSITIONS

  • Professor (August 2007 – Present)
    Department of Physics, University of Wisconsin, Milwaukee
  • Visiting Professor (April 2006 – July 2006)
    Institute for Materials Research, Tohoku University, Japan
  • Associate Professor (August 2003 – May 2007)
    Department of Physics, University of Wisconsin, Milwaukee
  • Visiting Professor (2001 – 2002)
    Institute of Physics, Chinese Academy of Sciences, Beijing, China
  • Assistant Professor (August 1999 – May 2003)
    Department of Physics, University of Wisconsin, Milwaukee
  • Staff Research Associate (August 1996 – July 1999)
    Department of Chemical Engineering, University of California, Los Angeles
  • Postdoctoral Fellow (August 1995 – July 1996)
    Institute for Materials Research, Tohoku University, Japan

SELECTED AWARDS

  • 2014      UWM Foundation Research Award, UW-Milwaukee
  • 2001      CAREER Award, National Science Foundation
  • 1998      Chancellor’s Award for Postdoctoral Research, UC-Los Angeles
  • 1996      E. W. Müller Outstanding Young Scientist Award, International Field Emission Society

HIGH IMPACT PUBLICATIONS

  1. “Direct experimental determination of onset of electron-electron interactions in gap opening of zigzag graphene nanoribbons”, Y. Y. Li, M. X. Chen, M. Weinert, and L. Li, Nature Communications 5:4311 doi: 10.1038/ncomms5311 (2014).
  2. (cover article) “Tuning Dirac states by strain in the topological insulator Bi2Se3”, Y. Liu, Y. Y. Li, S. Rajput, D. Gilks, L. Lari, P. L. Galindo, M. Weinert, V. K. Lazarov, and L. Li, Nature Physics 10, 294 (2014).
  3. “Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3”, C. H. Li, O. M. J. van‘t Erve, J. T. Robinson, Y. Liu, L. Li, and B. T. Jonker, Nature Nanochnology 9, 218 (2014).
  4. “Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky contact”, S. Rajput, M. Chen, Y. Liu, Y. Y. Li, M. Weinert, and L. Li, Nature Communications 4, 2752 doi: 10.1038/ncomms3752 (2013).
  5. (Cover article) “Charging Dirac states at antiphase domain boundaries in the three-dimensional topological insulator Bi2Se3”, Y. Liu, Y. Y. Li, D. Gilks, V. K. Lazarov, M. Weinert, and L. Li, Phys. Rev. Lett. 110, 186804 (2013).
  6. “Spiral growth without dislocations: Molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001)”, Y. Liu, M. Weinert, and L. Li, Phys. Rev. Lett. 108, 115501 (2012).
  7. “Epitaxial graphene on SiC(0001): more than just honeycomb”, Y. Qi, R. H. Rhim, G. F. Sun, M. Weinert, and L. Li, Phys. Rev. Lett. 105, 085502 (2010).
  8. “Atomistic view of the autosurfactant effect during GaN epitaxy”, S. T. King, M. Weinert, and L. Li, Phys. Rev. Lett. 98, 206106 (2007).
  9. “Selected growth of cubic and hexagonal GaN epitaxial films on polar MgO(111)”, V. K. Lazarov, J. Zimmerman, S. H. Cheung, L. Li, M. Weinert, and M. Gajdardziska-Josifovska, Phys. Rev. Lett. 94, 216101 (2005).
  10. “Role of defect sites and Ga polarization in the magnetism of Mn-doped GaN”, D. J. Keavney, S. H. Cheung, S. T. King, M. Weinert, and L. Li, Phys. Rev. Lett. 95, 257201 (2005).
  11. “Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds”, K. Raghavachari, Q. Fu, G. Chen, L. Li, C. H. Li, D. C. Law, and R. F. Hicks, J. Am. Chem. Soc. 124, 15119 (2002).
  12. “Example of a compound semiconductor surface that mimics silicon: The InP (001) (2×1) reconstruction”, L. Li, B. –K. Han, Q. Fu, and R. F. Hicks, Phys. Rev. Lett. 82, 1879 (1999).

COMPLETE PUBLICATION LIST

  1. “Direct experimental determination of onset of electron-electron interactions in gap opening of zigzag graphene nanoribbons”, Y. Y. Li, M. X. Chen, M. Weinert, and L. Li, Nat. Commun. 5, 4311(2014).
  2. “Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction”, D. Tomer, S. Rajput, L. J. Hudy, and L. Li, App. Phys. Lett. 105, 021607(2014).
  3. “Direct experimental evidence for the reversal of carrier type upon hydrogen intercalation in epitaxial graphene/SiC(0001)”, S. Rajput, Y. Y. Li, and L. Li, Appl. Phys. Lett. 104, 041908(2014).
  4. “Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3”, C. H. Li, O. M. J. van ‘t Erve, J. T. Robinson, Y. Liu, L. Li, and B. T. Jonker, Nat. Nanotechnology 9, 218 (2014).
  5. “Tuning Dirac states by strain in the topological insulator Bi2Se3”, Y. Liu, Y. Y. Li, S. Rajput, D. Gilks, L. Lari, P. L. Galindo, M. Weinert, V. K. Lazarov, and L. Li, Nat. Physics 10, 294 (2014).
  6. “Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky contact”, S. Rajput, M. Chen, Y. Liu, Y. Y. Li, M. Weinert, and L. Li, Nat. Commun. 4, 2752 (2013).
  7. (Cover article) “Charging Dirac states at antiphase domain boundaries in the three-dimensional topological insulator Bi2Se3”,Y. Liu, Y. Y. Li, D. Gilks, V. K. Lazarov, M. Weinert, and L. Li, Phys. Rev. Lett. 110, 186804 (2013).
  8. “Formation of nitrogen-vacancy complexes during plasma-assisted nitrogen doping of epitaxial graphene on SiC(0001)”, S. H. Rhim, Y. Qi, Y. Liu, M. Weinert, and L. Li, Appl. Phys. Lett. 100, 233119 (2012).
  9. “Structural and magnetic properties of MBE grown GeMnN2 thin films”, Y. Liu, and V. K. Lazarov, S. H. Cheung, D. J. Keavney, Z. Gai, M. Gajdardziska-Josifovska, M. Weinert, and L. Li, Phys. Rev. B 85, 144113 (2012).
  10. “The role of defects in the magnetic properties of Cu-doped GaN”, Y. Liu, Z. Gai, M. Weinert, and L. Li, Phys. Rev. B 85, 075207 (2012).
  11. “Spiral growth without dislocations: Molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001)”, Y. Liu, M. Weinert, and L. Li, Phys. Rev. Lett. 108, 115501 (2012).
  12. “A novel Si diffusion path for pit-free graphene growth on SiC(0001)”, G. F. Sun, S. H. Rhim, Y. Liu, Y. Qi, J. F. Jia, Q. K. Xue, M. Weinert, and L. Li, Phys. Rev. B 84, 195455 (2011).
  13. (Cover article) “Spiral growth and formation of strain-mediated surface nano structures during the initial stages of InN epitaxy on GaN(0001)”, Y. Liu and L. Li, Nanotechnology 22, 425707 (2011).
  14. “Role of functionalized transition-metal coated W tips in STM imaging: Application to epitaxial graphene on SiC(0001)”, S. H. Rhim, Y. Qi, G. F. Sun, Y. Liu, M. Weinert, and L. Li, Phys. Rev. B 84, 125425 (2011).
  15. (Cover article) “Electron standing waves on GaN(0001) pseudo (1×1): A FT-STM study at room temperature”, G. F. Sun, Y. Liu, Y. Qi, J. F. Jia, Q. K. Xue, M. Weinert, and L. Li, Nanotechnology 21, 435401 (2010).
  16. “Epitaxial graphene on SiC(0001): more than just honeycomb”, Y. Qi, R. H. Rhim, G. F. Sun, M. Weinert, and L. Li, Phys. Rev. Lett. 105, 085502 (2010).
  17. (Cover article) “Atomic-scale imaging and manipulation of ridges on epitaxial graphene on 6H-SiC(0001)”, G. F. Sun, J. F. Jia, Q. K. Xue, and L Li, Nanotechnology 20, 355701 (2009).
  18. “Electronic structures of Mn-induced phases on GaN(0001)”, Y. Qi, G. F. Sun, M. Weinert, and L. Li, Phys. Rev. B 80, 235323 (2009).
  19. “Incorporation of Ge on the GaN(0001) surface”, Y. Qi, S. T. King, S. H. Cheung, M. Weinert, and L. Li,.Appl. Phys. Lett. 92, 111918 (2008).
  20. “Role of Mn mobility in formation of cubic and hexagonal Ga1-xMnxN”, V. K. Lazarov, S. H. Cheung, Y. Cui, L. Li, and M. Gajdardziska-Josifovska, Appl. Phys. Lett. 92, 101914 (2008).
  21. “An atomistic view of the autosurfactant effect during GaN epitaxy”, S. T. King, M. Weinert, and L. Li, Phys. Rev. Lett. 98, 206106 (2007).
  22. (Invited paper) “Spectroscopic studies of compound semiconductor surfaces as it relates to the growth of nanomaterials”, R. S. Woo, L. Li, and R. F. Hicks, Proc. SPIE vol. 6325, 63250K (2006).
  23. “Observation of standing waves at steps on GaN(0001) pseudo-(1×1) surface by scanning tunneling spectroscopy at room temperature”, M. L. Harland and L. Li, Appl. Phys. Lett. 89, 132104 (2006).
  24. “The role of defect sites and Ga polarization in the magnetism of Mn-doped GaN”, D. J. Keavney, S. H. Cheung, S. T. King, M. Weinert, and L. Li, Phys. Rev. Lett. 95, 257201 (2005).
  25. “Selected growth of cubic and hexagonal GaN epitaxial films on polar MgO(111)”, V. K. Lazarov, J. Zimmerman, S. H. Cheung, L. Li, M. Weinert, and M. Gajdardziska-Josifovska, Phys. Rev. Lett. 94, 216101 (2005).
  26. “Porous gallium phosphide: challenging material for nonlinearoptical applications”, V. A. Melnikov, L. A. Golovan, S. O. Konorov, A. B. Fedotov, G. I. Petrov, L. Li, V. V. Yakovlev, S. A. Gavrilov, A. M. Zheltikov, V. Yu. Timoshenko1, and P. K. Kashkarov, Phys. Stat. Sol. (c) 2, 3248 (2005).
  27. “Indium phosphide (001)-(2×1): direct evidence for a hydrogen-stabilized surface reconstruction”, G. Chen, S. F. Cheng, D.J. Tobin, L. Li, K. Raghavachari, and R. F. Hicks, Phys. Rev. B 68, 121303 (2003).
  28. “Cubic GaN formation in Mn/GaN multilayer films grown on 6H-SiC(0001)”, Y. Cui, V. K. Lazarov, M. M. Goetz, H. Liu, D. P. Robertson, M. Gajdardziska-Josifovska, L. Li, Appl. Phys. Lett. 82, 4666 (2003).
  29. “Efficient second-harmonic generation by scattering from porous gallium phosphide”, L. A. Golovan, V. A. Mel’nikov, S. O. Konorov, A. B. Fedotov, S. A. Gavrilov, A. M. Zheltikov, P. K. Kashkarov, V. Yu. Timoshenko, G. I. Petrov, L. Li, and V. V. Yakovlev, JETP Lett. 78, 193 (2003).
  30. “A (10×10) domain wall structure induced by Mn adsorption on the pseudo (1×1) surface of GaN (0001)”, Y. Cui and L. Li, Surf. Sci. 522, L21 (2003).
  31. “Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds”, K. Raghavachari, Q. Fu, G. Chen, L. Li, C. H. Li, D. C. Law, and R. F. Hicks, J. Am. Chem. Soc. 124, 15119 (2002).
  32. “Evolution of growth spirals during molecular beam epitaxy of GaN on 6H-SiC (0001)”, Y. Cui and L. Li, Phys. Rev. B 66, 155330 (2002).
  33. “Suppression of phase segregation during molecular-beam epitaxial growth of GaMnN using nitrogen-hydrogen plasma”, Y. Cui and L. Li, Appl. Phys. Lett. 80, 4139 (2002).
  34. “Arsenic adsorption and exchange with phosphorus on indium phosphide (001)”, C. H. Li, L. Li, D. C. Law, S. B. Visbeck, and R.F. Hick, Phys. Rev. B 65, 205322 (2002).
  35. “Suppression of spiral growth in molecular beam epitaxy of GaN on vicinal 6H-SiC(0001)”, Y. Cui and L. Li, Phys. Stat. Sol. (a) 188, 583 (2001).
  36. (invited paper) “The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors”, R. F. Hicks, Q. Fu, L. Li, S. B. Visbeck, Y. Sun, C. H. Li, and D. C. Law, J. de Physique IV 11, 31 (2001).
  37. “Site-specific surface chemistry of GaAs (001)”, L. Li, Surf. Rev. Lett. 7, 625 (2000).
  38. “Stress-induced anisotropy of gallium phosphide islands on gallium arsenide”, C. H. Li, L. Li, Q. Fu, M. J. Begarney and R. F. Hicks, Appl. Phys. Lett. 77, 2139 (2000).
  39. “Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide (001)”, M. J. Begarney, L. Li, C. H. Li, D. C. Law, Q. Fu, and R. F. Hicks, Phys. Rev. B 62, 8092 (2000).
  40. “Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy, J D. C. Law, L. Li, M. B. Begarney, and R. F. Hicks, J. Appl. Phys. 88, 508 (2000).
  41. “Mechanism of arsine adsorption on the gallium-rich GaAs (001)-(4×2) surface”, Q. Fu, L. Li, C. H. Li, M. J. Begarney, D. C. Law, and R. F. Hicks, J. Phys. Chem. B 104, 5595 (2000).
  42. “Ab initio cluster calculations of hydrogenated GaAs (001) surfaces”, Q. Fu, L. Li, and R. F. Hicks, Phys. Rev. B 61, 11034 (2000).
  43. “Determination of InP (001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen”, L. Li, Q. Fu, C. H. Li, B. –K, Han, and R. F. Hicks, Phys. Rev. B 61, 10223 (2000).
  44. “A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy”, L. Li, B. –K. Han, D. Law, C. H. Li, Q. Fu and R. F. Hicks, Appl. Phys. Lett. 75, 683 (1999).
  45. “Site-specific chemistry of gallium arsenide metalorganic chemical deposition”, Q. Fu, L. Li, M. Begarney, B. –K. Han, D. Law, and R. F. Hicks, J. Phys. IV 9, 3 (1999).
  46. “Hydrogen adsorption sites on GaAs (001) reconstructions”, R. F. Hicks, H. Qi, Q. Fu, B. –K. Han, and L. Li, J. Chem. Phys. 110, 10498 (1999).
  47. “Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy”, M. J. Begarney, L. Li, B. –K, Han, D. Law, C. H. Li, H. Yoon, M. S. Goorsky, and R. F. Hicks, J. Appl. Phys. 86, 318 (1999).
  48. “Example of a compound semiconductor surface that mimics silicon: The InP (001) (2×1) reconstruction”, L. Li, B. –K. Han, Q. Fu, and R. F. Hicks, Phys. Rev. Lett. 82, 1879 (1999).
  49. “Step structure of arsenic-terminated vicinal Ge (100)”, S. Gan, L. Li, M. J. Begarney, D. Law, B. –K. Han, and R. F. Hicks, J. Appl. Phys. 85, 2004 (1999).
  50. “Surface phases of GaAs and InAs (001) found in the metalorganic vapor-phase epitaxy”, L. Li, B. –K. Han, and R. F. Hicks, Appl. Phys. Lett. 73, 1239 (1998).
  51. “Characterization of dislocations in germanium substrates induced by mechanical stress”, S. Gan, L. Li, and R. F. Hicks, Appl. Phys. Lett. 73, 1068 (1998).
  52. “Structure and composition of c(4×4) reconstruction formed during gallium arsenide metalorganic vapor-phase epitaxy”, B. –K Han, L. Li, and R. F. Hicks, Appl. Phys. Lett. 72, 3347 (1998).
  53. “The reaction of carbon tetrachloride with gallium arsenide (001)”, L. Li, S. Gan, B. –K. Han, and R. F. Hicks, Appl. Phys. Lett. 72, 951 (1998).
  54. “Gallium Arsenide and Indium Arsenide Surfaces Produced by Metalorganic Vapor-Phase Epitaxy”, L. Li, B. –K. Han, M. Begarney, D. Law, and R. F. Hicks, J. Cryst. Growth 195, 28 (1998).
  55. (Invited paper) “Structure of compound semiconductor surfaces in the MOVPE environment”, B. –K. Han, L. Li, M. J. Begarney, D. Law, and R. F. Hicks, Proceedings of The 194th Electrochemical Society Meeting, Boston, MA, November 1-6, 1998.
  56. “Atomic structure of the InxGa1-xAs/GaAs (001) (2×4) and (3×2) surfaces”, L. Li, B. –K. Han, R. F. Hicks, H. Yoon, and M. S. Goorsky, Ultramicroscopy 73, 229 (1998).
  57. “Site-specific chemistry of carbon tetrachloride decomposition on GaAs (001)”, L. Li, H. Qi, S. Gan, B. –K. Han, and R. F. Hicks, Appl. Phys. A 66, S501 (1998).
  58. “Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor-phase epitaxy”, B. –K. Han, L. Li, M. J. Kappers, R. F. Hicks, H. Yoon, M. S. Goorsky, and K. T. Higa, J. Electron. Mater. 27, 81 (1998).
  59. “Observation of the atomic structure of GaAs (001) films grown by metalorganic vapor phase epitaxy”, L. Li, B. –K. Han, S. Gan, H. Qi, and R. F. Hicks, Surf. Sci. 398, 386 (1998).
  60. “Scanning tunneling microscopy of chemically cleaned germanium (100) surfaces”, S. Gan, L. Li, B. –K. Han, H. Qi, and R. F. Hicks, Surf. Sci. 395, 69 (1998).
  61. “Composition and structure of vicinal Ge(100) surface exposed to tertiarybutylarsine”, S. Gan, L. Li, B. –K. Han, H. Qi, and R. F. Hicks, MRS Proceedings 485, 247 (1998).
  62. “Mechanism of doping gallium arsenide with carbon tetrachloride during organometallic vapor-phase epitaxy”, M. L. Warddrip, M. J. Kappers, L. Li, H. Qi, B. –K. Han, S. Gan, and R. F. Hicks, J. Electron. Mater. 26, 1189 (1997).
  63. “Effect of surface polarity on gallium adsorption on 6H-SiC surfaces”, L. Li, C. Tindall, Y. Hasegawa, and T. Sakurai, Appl. Phys. Lett. 71, 2776 (1997).
  64. “STM study of C2H2 adsorption on Si (100)”, L. Li, C. Tindall, O. Takaoka, Y. Hasegawa, T. Sakurai, Phys. Rev. B 56, 4648 (1997).
  65. “Interaction of C60 with the (3×3) and (√3x√3) surfaces of 6H-SiC(0001): adsorption, decomposition, and SiC growth”, L. Li, Y. Hasegawa, H. Shinohara, and T. Sakurai, J. Vac. Sci. & Technol. B 15, 1300 (1997).
  66. “Si- and C-rich structure of the 6H-SiC(0001) surface”, L. Li, Y. Hasegawa, and T. Sakurai, J. Vac. Sci. & Technol. B 15, 1307 (1997).
  67. “Structural and vibrational properties of 6H-SiC(0001) surfaces studied using STM/HREELS”, L. Li, C. Tindall, O. Takaoka, Y. Hasegawa, T. Sakurai, Surf. Sci. 385, 60 (1997).
  68. “Scanning tunneling microscopy of N2H4 on silicon surfaces”, C. Tindall, L. Li, O. Takaoka, Y. Hasegawa, T. Sakurai, Surf. Sci. 380, 481 (1997).
  69. “Adsorption of N2H4 on silicon surfaces”, C. Tindall, L. Li, O. Takaoka, Y. Hasegawa, and T. Sakurai, J. Vac. Sci & Technol. B 15, 1155 (1997).
  70. “Field-ion scanning tunneling microscopy study of the atomic structure of 6H-SiC surfaces cleaned by in situ Si molecular beam etching”, L. Li, Y. Hasegawa, and T. Sakurai, and I. S.T. Tsong, J. Appl. Phys. 80, 2524 (1996).
  71. “Surface atomic vacancies created by ion bombardment and desorption”, Y. Wei, L. Li, and I. S. T. Tsong, Nucl. Instrum. Meth. B 115, 572 (1996).
  72. “Surface structure and morphology induced by ultrathin Ti films on 6H-SiC(0001) and (000-1)”, L. Li and I. S.T. Tsong, Surf. Sci. 364, 54 (1996).
  73. “Atomic structures of 6H-SiC (0001) and (000-1) surfaces”, L. Li and I. S. T. Tsong, Surf. Sci. 351, 141 (1996).
  74. “Structures of 6H-SiC surfaces”, L. Li, Y. Hasegawa, I. S. T. Tsong, and T. Sakuri, J. de Physique IV 6, 167 (1996).
  75. “Fullerene (C60) adsorption and films growth on the (√3x√3) and (3×3) surface of 6H-SiC(0001)”, L. Li, Y. Hasegawa, H. Shinohara, and T. Sakurai, J. de Physique IV 6, 173 (1996).
  76. “Etching of Si(111)-(7×7) and Si(100)-(2×1) surfaces by atomic hydrogen”, Y. Wei, L. Li, and I. S. T. Tsong, Appl. Phys. Lett. 66, 1818 (1995).
  77. “Surface morphology induced by Ga and Sn overlayers on Si (100) and Si (311) surfaces”, L. Li, Y. Wei, and I. S. T. Tsong. J. Vac. Sci. & Technol. A 13, 1473 (1995).
  78. “Surface morphology of Si(111)-(7×7) under an external isotropic tensile stress”, Y. Wei, L. Li, and I. S. T. Tsong, J. Vac. Sci. & Technol. A 13, 1609 (1995).
  79. “Surface morphology of Pb overlayers grown on Si(100)-(2×1)”, L. Li, C. Koziol, K. Wurm, Y. Hong, E. Bauer, and I. S. T. Tsong, Phys. Rev. B 50, 10834 (1994).
  80. “Reconstruction, step-bunching and faceting of a vicinal Si(100) surface induced by indium adsorption”, L. Li, Y. Wei, and I. S. T. Tsong, Surf. Sci. 304, 1 (1994).
  81. “The structure of the Si(100)-(4×3)In surface studied by STM and ICISS”, B. E. Steele, D. M. Cornelison, L. Li, and I. S. T. Song, Nucl. Instrum. Meth. B 85, 414 (1994).
  82. “Structure of the Si(100)-(2×2)In surface”, B. E. Steele, L. Li, J. L. Stevens, and I. S. T. Tsong, Phys. Rev. B 47, 9925 (1993).

BOOK CHAPTERS

  1. “Epitaxial graphene on SiC(0001): More than just honeycombs”, L. Li, in “Physics and Applications of Graphene: Experiments” (http://www.intechopen.com/articles/show/title/epitaxial-graphene-on-sic-0001-more-than-just-honeycombs), 2011.
  2. “Atomic structure of 6H-SiC (0001) and (000 )”, L. Li and T. Sakurai, in Advances in Scanning Probe Microscopy, T. Sakurai and Y. Watanabe, Eds., Springer Series, Advances in Materials Research, Springer-Verlag Berlin, Heidelberg, Germany, 2000, pp. 65-90.

PATENTS

  1. “Method and apparatus for the production of a semiconductor compatible ferromagnetic film”, Y. Cui and L. Li, (US patent #6869806 issued on March 22, 2005).

EXTRAMURAL FUNDING

  1. “DMREF: Emergent functionalities at the epitaxial interfaces of correlated electron and strong spin-orbit materials”, NSF (co-PI), $810,000, 09/01/13 – 08/31/16
  2. “Tailoring the electronic properties of graphene via nanostructuring: An integrated atomic resolution STM and non-contact AFM study”, DOE (PI), $605,000, 8/16/12 – 7/15/15
  3. “Epitaxial growth and doping of topological insulator heterostructures by molecular beam epitaxy”, NSF (PI), $579,141, 07/01/11 – 06/31/15
  4. “Graphene ferroelectric tunnel junction for non-volatile memories”, UWM Research Foundation (PI), $70,000, 7/10 – 6/11
  5. “Tailoring magnetism in epitaxial graphene on SiC”, DOE (PI), $555,000, 08/15/2009 – 08/14/2012
  6. “Selective doping of antiferromagnetic semiconductors, NSF (PI), $487,380, 07/01/2007 – 06/30/2010
  7. “Toward the realization of room temperature ferromagnetic semiconductors: A spin-polarized STM study”, DOE (PI), $488,549, 08/26/2005 – 08/25/2009
  8. “Exploring defect controlled ferromagnetism in Mn doped ZnGeP2/GaP heterojunction”, NSF (PI), $96,639, 07/01/2003 – 06/30/2005
  9. “Atomic processes in low temperature molecular beam epitaxy of diluted magnetic III/V compound semiconductor”, NSF CAREER Award, $463,527, 01/01/2001 – 12/31/2006
  10. “Characterizing ITO growth on SiO2 and polyester using microwave plasma assisted electron beam evaporation deposition”, University of Wisconsin System Applied Research Program (PI), $42,983, 07/01/2000-10/01/2001

INTRAMURAL FUNDING

  1. “Topological insulators: Growth and electronic properties”, RGI (co-PI), $198,070, 07/11 – 07/12
  2. “Magnetic graphene”, RGI (PI), $174,717, 7/09 – 6/10
  3. “Polarization and electric field in heterostructures”, RGI (co-PI), $157,999, 07/01/2008 – 06/30/2009

GRADUATE RESEARCH SUPERVISION

Current: Zhuozhi Ge, Lawrence Hudy, Duyshant Tomer, Shivani Rajput
Past: Guofeng Sun (Ph. D, 2009); Mike Harland (M.S. 2006); Seth King (2003 – 2006); Joe Spang (M.S., 2004); Yongjie Cui (Ph. D., 2002)

POSTDOCTORAL ASSOCIATE RESEARCH SUPERVISION

Current: Dr. Yaoyi Li (2011 – current)
Past: Dr. Ying Liu (2009 – 2012); Dr. Yun Qi (Sept. 2006 – 2008); Dr. Irene Cheung (2003 – 2004); Dr. Yongjie Cui (2002); Dr. Hongfei Liu (2001 – 2002)

UNDERGRADUATE RESEARCH SUPERVISION

Rusty Mundorf (current), Dustin Kreft (2005 – 2006); Michelle Goetz (2002 – 2003); Mike Letenburg (2000 – 2001); Kevin Quealy (2001)

STUDENT AWARDS

  • 2011 Lichtman Award, Shivani Rajput, Physics Department, UW-Milwaukee,
  • 2011 Best presentation of postdoctoral research, Y. Liu, M. Weinert, and L. Li, “Spiral formation during MBE growth and doping of topological insulator Bi2Se3”, Magnetic Interfaces and Nanostructures Division, 58th AVS International Symposium (2011), Nashville, TN
  • 2005 Best Poster, S. H. Cheung, V. K. Lazarov, J. Zimmerman, L. Li, M. Weinert, and M. Gajdardziska-Josifovska, “Selected growth of cubic and hexagonal GaN epitaxial films on polar MgO(111) surface”, Midwest Microscopy and Microanalysis Workshop on Dynamics of Materials Revealed by Electron Microscopy, Urbana, Illinois
  • Best Student Paper, S. T. King, D. J. Keavney, S. H. Cheung, M. Weinert, and L. Li, “The role of Ga-polarization and defect sites in the magnetism of Mn-doped GaN”, LSS Student Symposium, UW-Milwaukee
  • 2004 M. L. Harland was one of the 58 graduate students selected nationwide to attend the 54th Meeting of Nobel Laureates, held in Lindau, Germany, June 27-July 2, 2004
  • Best Undergraduate Student Poster, J. Zimmerman, V. K. Lazarov, M. Weinert, S. H. Cheung, L. Li, and M. Gajdardziska-Josifovska, “Atomic structure of polar GaN(111)/MgO(111) interface from HRTEM”, LSS Student Symposium, UW-Milwaukee
  • 2003 Best Student Paper, LSS Student Symposium, V. K. Lazarov, L. Li, and M. Gajdardziska-Josifovska, “Electron microscopy study of the Mn-doped GaN”, LSS Student Symposium, UW-Milwaukee
  • 2002 Best Undergraduate Student Poster, K. Quealy, Y. Cui, and L. Li, “Structure and properties of GaN grown on Al2O3(0001)”, LSS Student Symposium, UW-Milwaukee

PROFESSIONAL SERVICE

  • 09 – 12 Reviewer for National Science Foundation’s unsolicited grant proposals
  • 09 – 12 Panel members for NSF and DOE’s CAREER Programs
  • 2010 Member of the Organizing Committee, Physical Electronics Conference

OUTREACH

Hosted high school physics teachers for the Research Experience for Teachers (RET):

  • 2005 Hosted Tim Moeller of Hamilton High School (RET project: “An Internet-based strategy for enhancing science education for gifted high school students”)
  • 2007 Hosted Tim Moeller of Hamilton High School (RET project: “Bringing an Atomic Force Microscope to School”)
  • 2008 Hosted Tim Moeller of Hamilton High School (RET project: “Carbon: graphene, buckyballs, and nanotubes”)
  • 2009 Hosted Tim Moeller of Hamilton High School (RET project: “Color mapping of atomic layers”)
  • 2012 Hosted David Verne Case High School (RET project: “Writing a graphite variable resistor”)
  • 2013 Hosted David Verne Case High School (RET project: “Mission to Mars”), and Sarah Richter of Nicolet High School (RET project: “Making Graphene Supercapacitor: Getting High School Students “Charged Up” about Physics”)
  • 2014 Hosted Sarah Richter of Nicolet High School (RET project: “Atomic Lego: Building novel materials one atomic layer a time”)

COURSES TAUGHT

Fall ’14

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)
  • Physics 551: Introduction to Solid State Physics I (3 credits)
  • Physics 990: Research (9 credits)

Spring ’14

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)
  • Physics 752: Solid State Theory II (3 credits)
  • Physics 990: Research (6 credits)

Fall ’13

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)
  • Physics 990: Research (6 credits)

Spring ’13 Sabbatical Leave

Fall ’12

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)
  • Physics 990: Research (15 credits)

Spring ’12

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)
  • Physics 775: Surface Physics I (3 credits)
  • Physics 990: Research (6 credits)

Fall ’11

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)
  • Physics 990: Research (5 credits)

Spring ’11

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)
  • Physics 575: Vacuum Science and Technology (3 credit)

Fall ’10

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Spring ’10

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)
  • Physics 990: Research (9 credit)

Fall ’09

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)
  • Physics 990: Research (9 credit)

Fall ’08

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Spring ’08

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Fall ’07

  • Physics 531: Introduction to Quantum Mechanics (3 credits)
  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Spring ’07

  • Physics 515: Statistical Mechanics (3 credit)
  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Fall ’06

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Spring ’06 Sabbatical Leave

Fall ’05 Sabbatical Leave

Spring ’05

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Fall ’04

  • Physics 499: Introduction to Nanoscience and Technology (3 credits)
  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Spring ’04

  • Physics 551: Introduction to Solid State Physics (3 credits)
  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Fall ’03

  • Physics 575: Vacuum Science and Technology (3 credit)
  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Spring ’03

  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Fall ’02

  • Physics 990: Research (3 credits)
  • Physics 775: Surface Physics I (3 credits)
  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Spring ’02

  • Physics 990: Research (3 credits)
  • Physics 209: Physics I (calculus) (3 credits)
  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Fall ’01

  • Physics 990: Research (3 credits)
  • Physics 775: Surface Physics I (3 credits)
  • Physics 214: General Physics Laboratory I (calculus) (1 credit)

Spring ’01

  • Physics 990: Research (3 credit)
  • Physics 515: Statistical Mechanics (3 credits)
  • Physics 121: General Physics Laboratory I (non-calculus) (1 credit)

Fall ’00

  • Physics 990: Research (3 credit)
  • Physics 575: Vacuum Science and Technology (3 credits)
  • Physics 121: General Physics Laboratory I (non-calculus) (1 credit)

Spring ’00

  • Physics 990: Research (3 credits)
  • Physics 121: General Physics Laboratory I (non-calculus) (1 credit).

Fall ’99

  • Physics 990: Research (3 credits)
  • Physics 775: Surface Physics I (3 credits)
  • Physics 121: General Physics Laboratory I (non-calculus) (1 credit).